English

ד"ר אבי קרסנטי

טלפון
02-675-1140
דוא"ל
karsenty@jct.ac.il
אתר אישי
https://www.aleo.solutions/
פרסומים

Peer-Reviewed Papers in Refereed Journals – rev0.1 (last updated 2023-10-03)

  1. A. Karsenty, A. Saar, N. Ben-Yosef, J. Shappir, “Enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer”, Appl. Phys. Letters 82(26), 4830–4832, 2003. doi: https://aip.scitation.org/doi/10.1063/1.1587877. IF: 4.049, SJR: Q1.
  2. A. Karsenty, A. Chelly, "A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices", International Journal of Electrical and Computer Engineering 7(1), 66-70, 2013. doi: https://publications.waset.org/17367/pdf. IF: 1.001, SJR: Q2.
  3. A. Karsenty, A. Chelly, "Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs", Active and Passive Electronic Components, Volume 2013, Article ID 801634, 10 pages. AR: 14% Acceptance Rate. doi: http://dx.doi.org/10.1155/2013/801634. SJR: Q4.
  4. A. Karsenty, A. Chelly, "Comparative study of NSB and UTB SOI MOSFETs Characteristics by Extraction of Series Resistance", Solid-State Electronics 91, 28-35, 2014. doi: http://dx.doi.org/10.1016/j.sse.2013.09.003. IF: 1.666, SJR: Q2.
  5. A. Karsenty, A. Chelly, "Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-recessed Nanoscale SOI MOSFETs", Active and Passive Electronic Components, Volume 2013, Article ID 813518, 11 pages. AR: 14% Acceptance Rate1. doi: http://dx.doi.org/10.1155/2013/813518. SJR: Q4.
  6. A. Karsenty, A. Chelly, "Application, Modeling and Limitations of Y-function based Methods for Massive Series Resistance in Nanoscale SOI MOSFETs", Solid-State Electronics 92, 12-19, 2014. doi: http://dx.doi.org/10.1016/j.sse.2013.10.020. IF: 1.666, SJR: Q2.
  7. A. Karsenty, A. Chelly, “Modeling of the Transfer Characteristics for High Series Resistance in Nanoscale FD SOI MOSFET Devices”, International J. of Eng. Innovation & Research 3(1), 28-34, 2014. doi: http://www.ijeir.org/administrator/components/com_jresearch/files/publications/IJEIR_790_Final.pdf

Since latest appointment

  1. A. Karsenty, A. Chelly, "Y-Function Analysis of the Low Temperature Behavior of Ultrathin FD SOI MOSFETs", Active and Passive Electronic Components, Volume 2014 (2014), Article ID 697369, 10 pages. doi: http://dx.doi.org/10.1155/2014/697369. AR: 14% Acceptance Rate1, SJR: Q3.
  2. A. Karsenty, A. Chelly, "Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime using Y and Z functions", Active and Passive Electronic Components, Volume 2014 (2014), Article ID 782417, 8 pages. doi: http://dx.doi.org/10.1155/2014/782417. AR: 14% Acceptance Rate1, SJR: Q3.
  3. A. Karsenty, A. Chelly, "Usage and limitation of standard mobility models for TCAD simulation of nano-scaled FD-SOI MOSFETs”, Active and Passive Electronic Components, Volume 2015, Article ID 460416, 9 pages. doi: http://dx.doi.org/10.1155/2015/460416. AR: 14% Acceptance Rate1, SJR: Q4.
  4. A. Karsenty, A. Chelly, “Anomalous Kink Effect in Low Dimensional Gate-Recessed Fully-Depleted SOI MOSFETs at Low Temperature”, NANO: Brief Reports and Reviews 10(7), 1550093 (4 pages), 2015. doi: http://dx.doi.org/10.1142/S1793292015500939. IF: 1.1, SJR: Q3.
  5. A. Karsenty, A. Chelly, “Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel”, Active and Passive Electronic Components, Volume 2015 (2015), Article ID 609828, 5 pages. doi: http://dx.doi.org/10.1155/2015/609828. AR: 14% Acceptance Rate1, SJR: Q4.
  6. A. Zev, A. Karsenty, A. Chelly, Z. Zalevsky, “Nanoscale Silicon-On-Insulator Photo-Activated Modulator Building Block for Optical Communication”, IEEE Photonics Technology Letters 28(5), 569-572, 2016. doi: https://ieeexplore.ieee.org/document/7336532. SJR: Q1, IF: 2.446.
  7. E. Bahalul, A. Bronfeld, S. Epshtein, Y. Saban, A. Karsenty, and Y. Arieli, “Hyperspectral imaging camera using wavefront division interference”, Opt. Lett. 41, 938-941 (2016). doi: http://dx.doi.org/10.1364/OL.41.000938. SJR: Q1, IF: 3.589.
  8. A. Bennett, I. Gadassi, Z. Priel, Y. Mandelbaum, A. Karsenty, T. Luc, A. Chelly, I. Shlimak, Z. Zalevsky, “Fast Optoelectronic Responsivity of metal-oxide-semiconductor nanostructures”, Journal of Nanophotonics 10(3), 036001 (2016). doi: http://dx.doi.org/10.1117/1.JNP.10.036001. SJR: Q2, IF: 1.562.
  9. Y. Mandelbaum, A. Zev, A. Chelly, Z. Zalevsky, A. Karsenty, “Study of the Photo- and Thermo-Activation Mechanisms in Nanoscale SOI Modulator”, Journal of Sensors, Volume 2017 (2017), Article ID 9581976, 11 pages. doi: https://doi.org/10.1155/2017/9581976. SJR: Q2, IF: 2.057.
  10. A. Karsenty, E. Novoselski, A. Yifrach, E. Lanzmann and Y. Arieli, “Manipulations of Wavefront Propagation: Useful Methods and Applications for Interferometric Measurements and Scanning”, Scanning, Volume 2017, Article ID 7293905, 7 pages. doi: https://doi.org/10.1155/2017/7293905. IF: 0.994, SJR: Q3.
  11. M. Bendayan, R. Sabo, R. Zolberg, Y. Mandelbaum, A. Chelly, A. Karsenty, "Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices," Journal of Nanophotonics 11(3), 036016 (2017). doi: http://dx.doi.org/10.1117/1.JNP.11.036016. SJR: Q2, IF: 1.562.
  12. Y. Mandelbaum, I. Gadasi, A. Zev, A. Chelly, Z. Zalevsky, and A. Karsenty, “Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor”, J. of Sensors, Volume 2017 (2017), Article ID 1961734, 9 pages. doi: https://doi.org/10.1155/2017/1961734. IF: 2.057, SJR: Q2.
  13. M. Karelits, Y. Mandelbaum, A. Chelly, and A. Karsenty, “Electro-Optical Study of Nanoscale Al-Si-Truncated Conical Photodetector with Subwavelength Aperture”, Journal of Nanophotonics 11(4), 046021 (2017). doi: http://dx.doi.org/10.1117/1.JNP.11.046021. IF: 1.562, SJR: Q2.
  14. A. Karsenty, Z. Weig, S. Feldman, Y. Arieli, “Full Field Imaging Ellipsometry (FFIE) Platform using CCD Camera and Advanced Software for Simultaneous Spots’ Sensing and Measurement”, International Journal of Measurement Technologies and Instrumentation Engineering (IJMTIE)  6(1), 33-45, 2017. doi: https://doi.org/10.4018/IJMTIE.2017010104.
  15. A. Karsenty, Y. Lichtenstadt, S. Naeim, Y. Arieli, “Improving Interferometry Instrumentation by Mixing Stereoscopy for 2π Ambiguity Solving”, International Journal of Measurement Technologies and Instrumentation Engineering (IJMTIE) 6(2), 43-55, 2017. doi: https://doi.org/10.4018/IJMTIE.2017070104.
  16. A. Karsenty and Y. Mandelbaum, “Computer Algebra Challenges in Nanotechnology: Accurate Modeling of nanoscale electro-optic devices using Finite Elements Method”, Mathematics in Computer Science 13(1-2), 117–130 (2019). doi: https://doi.org/10.1007/s11786-018-0375-z. IF: 0.62, SJR: Q3.
  17. M. Karelits, Y. Mandelbaum, A. Chelly, A. Karsenty, “Laser beam scanning using near-field scanning optical microscopy nanoscale silicon-based photodetector”, Journal of Nanophotonics 12(3) 036002 (23 July 2018). doi: https://doi.org/10.1117/1.JNP.12.036002. IF: 1.562, SJR: Q2.
  18. M. Bendayan, Y. Mandelbaum, G. Teller, A. Chelly, and A. Karsenty, “Probing of Quantum Energy Levels in Nanoscale Body SOI-MOSFET: Experimental and Simulation Results”, J. of Appl. Phys. 124, 124306 (2018). doi: https://aip.scitation.org/doi/10.1063/1.5041857. IF: 2.328, SJR: Q2.
  19. E. Terkieltaub-Lee, Y. Albeck, and A. Karsenty, “Mode Analysis and Optimization of Split Y-Junction Sharing Very Low Index Difference”, Journal of Nanophotonics, 13(2), 026016 (22 June 2019). doi: https://doi.org/10.1117/1.JNP.13.026016. IF: 1.562, SJR: Q2.
  20. M. Karelits, Y. Mandelbaum, Z. Zalevsky, and A. Karsenty, “Time-Spectral based Polarization-Encoding for Spatial-Temporal Super-Resolved NSOM Readout”, Nature Scientific Reports 9, 13089 (2019). doi: https://doi.org/10.1038/s41598-019-49721-w. SJR: Q1, IF: 5.133.
  21. M. Bendayan, A. Chelly and A. Karsenty, “Quantum Physics Applied to Modern Optical MOS Transistor”, Opt. Eng. 58(9), 097106 (2019). doi: https://doi.org/10.1117/1.OE.58.9.097106. SJR: Q1, IF: 1.209.
  22. A. Karsenty, R. Mottes, “Hall Amplifier Nanoscale Device (HAND): Modeling, Simulations and Feasibility Analysis for THz Sensor”, Nanomaterials 2019, 9(11), 1618, Special Issue “Nano Fabrications of Solid-State Sensors and Sensor Systems”. doi: https://doi.org/10.3390/nano9111618. SJR: Q1, IF: 5.719.
  23. J. Belhassen, Z. Zalevsky, and A. Karsenty, “Optical Polarization Sensitive Ultra-Fast Switching and Photo-Electrical Device”, Nanomaterials 2019, 9(12), 1743, Special Issue “Nano Fabrications of Solid-State Sensors and Sensor Systems”. doi: https://doi.org/10.3390/nano9121743. SJR: Q1, IF: 5.719.
  24. M. Karelits, E. Lozitsky, A. Chelly, Z. Zalevsky and A. Karsenty, “Advanced Surface Probing using Dual-Mode NSOM-AFM Silicon-Based Photo-Sensor”, Nanomaterials 2019, 9(12), 1792, Special Issue “Nano Fabrications of Solid-State Sensors and Sensor Systems”. doi: https://doi.org/10.3390/nano9121792. SJR: Q1, IF: 5.719.
  25. J. Belhassen, A. Frisch, Y. Kapellner, Z. Zalevsky, and A. Karsenty, “V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP2AM): A polarizing transistor”, J. of Optical Society of America (JOSA) A 37(1), 46-55 (2020). doi: https://doi.org/10.1364/JOSAA.37.000046. SJR: Q1, IF: 1.861.
  26. T. Eisenfeld and A. Karsenty, “Super High Intensity Nano-Emitting (SHINE) Pixel for High Resolution and High Brightness Displays”, Journal of Nanophotonics 14(1), 016002 (7 January 2020). doi: https://doi.org/10.1117/1.JNP.14.016002. SJR: Q2, IF: 1.562.
  27. T. Eisenfeld and A. Karsenty, “Design and Modeling of Light Emitting Nano-pixel Structure (LENS) for High Resolution Display (HRD) in Visible Range”, Nanomaterials 10(2), 214, 2020. doi: https://doi.org/10.3390/nano10020214. SJR: Q1, IF: 5.719.
  28. E. Terkieltaub-Lee, Y. Albeck, and A. Karsenty, “Power Transfer between coupled waveguides made of different material for smooth integrated optical communication”, Journal of Nanophotonics 14(2), 026002 (7 April 2020). doi: https://doi.org/10.1117/1.JNP.14.026002. SJR: Q2, IF: 1.562.
  29. A. Karsenty, “A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nano-Scales and Quantum Devices”, Sensors 20(15), 4163, 2020.  doi: https://doi.org/10.3390/s20154163. SJR: Q1, IF: 3.847.
  30. M. Karelits, Z. Zalevsky, A. Karsenty, “Nano Polarimetry: Enhanced AFM-NSOM Triple-Mode Polarimeter Tip”, Nature Scientific Reports 10, 16201 (2020). doi: https://doi.org/10.1038/s41598-020-72483-9. SJR: Q1, IF: 5.133.
  31. Y. Mandelbaum, R. Mottes, Z. Zalevsky, D. Zitoun, A. Karsenty, “Design of Surface Enhanced Raman Scattering (SERS) Nanosensor Array”, Sensors 20(18), 5123, 2020. doi: https://doi.org/10.3390/s20185123. SJR: Q1, IF: 3.847.
  32. H. Perlman, T. Eisenfeld, A. Karsenty, “Performance Enhancement and Applications Review of Nano Light Emitting Device (LED)”, Nanomaterials 2021, 11(1), 23. Section “Nanophotonics Materials and Devices”, Special Issue “Nanophotonics for Light-Matter Interaction”. doi: https://doi.org/10.3390/nano11010023. SJR: Q1, IF: 5.719.
  33. Y. Mandelbaum, R. Mottes, Z. Zalevsky, D. Zitoun, A. Karsenty, “Investigations of Shape, Material and Excitation Wavelength Effects on Field Enhancement in SERS Advanced Tips”, Nanomaterials 2021, 11(1), 237. Special Issue “Application of SERS for Nanomaterials”. doi: https://doi.org/10.3390/nano11010237. SJR: Q1, IF: 5.719.
  34. G. Hirshfeld, Y. Garcia, G. Perepelitsa, Y. Vidal, A. Karsenty, Y. Kabessa and A. J. Agranat, “Enhanced electro-optic effect in potassium lithium tantalate niobate at the paraelectric phase near Tc”, Results in Physics, Volume 23, 2021, 104059. doi: https://doi.org/10.1016/j.rinp.2021.104059. SJR: Q1, IF: 4.565.
  35. A. Chelly, J. Belhassen, A. Karsenty, “Seebeck Coefficient’s Comparative Evaluation by Cross-Examination of Time-dependent Analytical Model, Numerical Simulation and Experimental Measurement Applied to Germanium Surface”, Applied Surface Science, Volume 568, 2021, 150876. doi: https://doi.org/10.1016/j.apsusc.2021.150876. SJR: Q1, IF: 7.392.
  36. A. Khakshoor, J. Belhassen, M. Bendayan, A. Karsenty, “Doping Modulation of Self-Induced Electric Field (SIEF) in Asymmetric GaAs/GaAlAs/GaAs Quantum Wells”, Results in Physics, Volume 32, 2022, 105093. doi: https://doi.org/10.1016/j.rinp.2021.105093. SJR: Q1, IF: 4.565.
  37. D. Glukhov, Z. Zalevsky, A. Karsenty, “Picosecond Pulsed Laser Illumination: An Ultimate Solution for Photonic vs. Thermal Processes’ Contest in SOI Photo-Activated Modulator”, Nature Scientific Reports 12, 1547 (2022). doi: https://doi.org/10.1038/s41598-021-04710-w. SJR: Q1, IF: 5.133.
  38. A. Chelly, J. Belhassen, A. Karsenty, “Spatial-Dependence Cross-Examination Method of the Seebeck Effect Applied to Ge Surface”, Applied Surface Science, Volume 585, 2022, 152587. doi: https://doi.org/10.1016/j.apsusc.2022.152587. SJR: Q1, IF: 7.392.
  39. D. Glukhov, A. Z. Levi, Z. Zalevsky, A. Karsenty, “Energy Hot Spots Distribution on Groove Surface, Elucidated by Hybrid Optical Model in Illuminated SOI Photo-Polarized-Activated Modulator”, Applied Surface Science, Volume 588, 2022, 152845. doi: https://doi.org/10.1016/j.apsusc.2022.152845. SJR: Q1, IF: 7.392.
  40. M. Bendayan, J. Belhassen, A. Karsenty, “Modulated Photoluminescence Low Temperature Measurements with Controlled Self-Induced Electric Field (SIEF) in Asymmetric GaAs/GaAlAs/GaAs Quantum Wells”, Journal of Luminescence 250 (2022), 119109. doi: https://doi.org/10.1016/j.jlumin.2022.119109. SJR: Q2, IF: 3.599.
  41. J. Belhassen, D. Glukhov, M. Karelits, Z. Zalevsky and A. Karsenty, “Nano-Apertures vs. Nano-Barriers: Surface Scanning through Obstacles and Super-Resolution in AFM-NSOM Dual-Mode”, Nano-Structures & Nano-Objects 33 (2023), 100933. doi: https://doi.org/10.1016/j.nanoso.2022.100933. SJR: Q1, IF: 0.807.
  42. J. Belhassen, S. Glass, E. Teblum, G. A. Stanciu, D. E. Tranca, Z. Zalevsky, S. G. Stanciu, A. Karsenty, “Towards Augmenting Tip-Enhanced Nanoscopy with Optically Resolved Scanning Probe Tips”, Advanced Photonics Nexus 2(2), 026002-1 – 026002-17 (January 2023). doi: https://doi.org/10.1117/1.APN.2.2.026002. SJR: Q1, expected IF: 13.5 (as its sister journal Advanced Photonics).
  43. A. Chelly, S. Glass, J. Belhassen, A. Karsenty, “Broad review of four-point probe correction factors: Enhanced analytical model using advanced numerical and experimental cross-examination”, Results in Physics, Volume 48, 2023, 106445. doi: https://doi.org/10.1016/j.rinp.2023.106445. SJR: Q1, IF: 4.565.
  44. Avi Karsenty, “Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review (Invited Article)”, IEEE Photonics Journal 15(4), 1-19 (2023). doi: 10.1109/JPHOT.2023.3295077 . SJR: Q1, IF: 2.4.
  45. A. Sanjeev, D. Glukhov, R. S. Rafeeka, A. Karsenty, Z. Zalevsky, “Near-field Projection Optical Microscope (NPOM): A New Approach to Nanoscale Super-Resolved Imaging”, Nature Scientific Reports 13(1), 1-13 (2023). SJR: Q1, IF: 5.133. doi: https://doi.org/10.1038/s41598-023-41978-6.

תאריך עדכון אחרון : 01/04/2024