Dr. Avi Karsenty

Telephone
Email
karsenty@jct.ac.il
Fields of Interest
  • Electro-Optics
  • Nano-photonics/nano-electronics
  • Super-Resolution
  • Metrology
  • Quality & Reliability
Reception Hours
Upon appointment
    CV

    Avi Karsenty received his PhD in applied physics/material science (both Microelectronics and Electro-Optics Divisions) from the Hebrew University of Jerusalem (HUJI) of 2003. He has over two decades of experience in the high tech industry in Europe and Israel, having spent sixteen years (1995-2011) with Intel in senior engineering and management positions and receiving several division recognition awards (DRAs).

    He returned to academia in 2011 with the vision of forming the next generation of students and of reinforcing the bridge between the academy and industry, serving from Oct. 2014 to Sep. 2018 as the head of the applied physics/electro-optics engineering department at the Jerusalem College of Technology (JCT), in addition to leading the HaEytanim Personal Empowerment Program. In Feb. 2016, he chaired the 2016 Optics Engineering conference in Jerusalem, with hundreds of attendees. In Oct. 2017, the physics/electro-optics engineering MSc program he developed was approved by Israel’s Council of Higher Education (CHE), and several dozen candidates began studies. Currently, Dr. Karsenty leads the Advanced Laboratory of Electro-Optics at JCT, the JCT Nanotechnology center for research and education, and is now fully dedicated to research activities and publications, in conjunction with lecturing on nanotechnology-related topics to MSc students.

    Dr. Karsenty is an IEEE and OSA/Optica Senior Member, and has received over 40 Awards in engineering and physics. His main areas of research interest and expertise are the development of quantum electro-optical coupled devices, device quality and reliability engineering, and the improvement of electro-optical measurement techniques. He has published tens of research articles in top journals and international conference proceedings.

    Publications

    Peer-Reviewed Papers in Refereed Journals – rev0.1 (last updated 2023-10-03)

    1. A. Karsenty, A. Saar, N. Ben-Yosef, J. Shappir, “Enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer”, Appl. Phys. Letters 82(26), 4830–4832, 2003. doi: https://aip.scitation.org/doi/10.1063/1.1587877. IF: 4.049, SJR: Q1.
    2. A. Karsenty, A. Chelly, "A Comparative Study of Electrical Transport Phenomena in Ultrathin vs. Nanoscale SOI MOSFETs Devices", International Journal of Electrical and Computer Engineering 7(1), 66-70, 2013. doi: https://publications.waset.org/17367/pdf. IF: 1.001, SJR: Q2.
    3. A. Karsenty, A. Chelly, "Modeling of the Channel Thickness Influence on Electrical Characteristics and Series Resistance in Gate-Recessed Nanoscale SOI MOSFETs", Active and Passive Electronic Components, Volume 2013, Article ID 801634, 10 pages. AR: 14% Acceptance Rate. doi: http://dx.doi.org/10.1155/2013/801634. SJR: Q4.
    4. A. Karsenty, A. Chelly, "Comparative study of NSB and UTB SOI MOSFETs Characteristics by Extraction of Series Resistance", Solid-State Electronics 91, 28-35, 2014. doi: http://dx.doi.org/10.1016/j.sse.2013.09.003. IF: 1.666, SJR: Q2.
    5. A. Karsenty, A. Chelly, "Influence of Series Massive Resistance on Capacitance and Conductance Characteristics in Gate-recessed Nanoscale SOI MOSFETs", Active and Passive Electronic Components, Volume 2013, Article ID 813518, 11 pages. AR: 14% Acceptance Rate1. doi: http://dx.doi.org/10.1155/2013/813518. SJR: Q4.
    6. A. Karsenty, A. Chelly, "Application, Modeling and Limitations of Y-function based Methods for Massive Series Resistance in Nanoscale SOI MOSFETs", Solid-State Electronics 92, 12-19, 2014. doi: http://dx.doi.org/10.1016/j.sse.2013.10.020. IF: 1.666, SJR: Q2.
    7. A. Karsenty, A. Chelly, “Modeling of the Transfer Characteristics for High Series Resistance in Nanoscale FD SOI MOSFET Devices”, International J. of Eng. Innovation & Research 3(1), 28-34, 2014. doi: http://www.ijeir.org/administrator/components/com_jresearch/files/publications/IJEIR_790_Final.pdf

    Since latest appointment

    1. A. Karsenty, A. Chelly, "Y-Function Analysis of the Low Temperature Behavior of Ultrathin FD SOI MOSFETs", Active and Passive Electronic Components, Volume 2014 (2014), Article ID 697369, 10 pages. doi: http://dx.doi.org/10.1155/2014/697369. AR: 14% Acceptance Rate1, SJR: Q3.
    2. A. Karsenty, A. Chelly, "Investigation of the Low-Temperature Behavior of FD-SOI MOSFETs in the Saturation Regime using Y and Z functions", Active and Passive Electronic Components, Volume 2014 (2014), Article ID 782417, 8 pages. doi: http://dx.doi.org/10.1155/2014/782417. AR: 14% Acceptance Rate1, SJR: Q3.
    3. A. Karsenty, A. Chelly, "Usage and limitation of standard mobility models for TCAD simulation of nano-scaled FD-SOI MOSFETs”, Active and Passive Electronic Components, Volume 2015, Article ID 460416, 9 pages. doi: http://dx.doi.org/10.1155/2015/460416. AR: 14% Acceptance Rate1, SJR: Q4.
    4. A. Karsenty, A. Chelly, “Anomalous Kink Effect in Low Dimensional Gate-Recessed Fully-Depleted SOI MOSFETs at Low Temperature”, NANO: Brief Reports and Reviews 10(7), 1550093 (4 pages), 2015. doi: http://dx.doi.org/10.1142/S1793292015500939. IF: 1.1, SJR: Q3.
    5. A. Karsenty, A. Chelly, “Anomalous DIBL Effect in Fully Depleted SOI MOSFETs Using Nanoscale Gate-Recessed Channel”, Active and Passive Electronic Components, Volume 2015 (2015), Article ID 609828, 5 pages. doi: http://dx.doi.org/10.1155/2015/609828. AR: 14% Acceptance Rate1, SJR: Q4.
    6. A. Zev, A. Karsenty, A. Chelly, Z. Zalevsky, “Nanoscale Silicon-On-Insulator Photo-Activated Modulator Building Block for Optical Communication, IEEE Photonics Technology Letters 28(5), 569-572, 2016. doi: https://ieeexplore.ieee.org/document/7336532. SJR: Q1, IF: 2.446.
    7. E. Bahalul, A. Bronfeld, S. Epshtein, Y. Saban, A. Karsenty, and Y. Arieli, “Hyperspectral imaging camera using wavefront division interference”, Opt. Lett. 41, 938-941 (2016). doi: http://dx.doi.org/10.1364/OL.41.000938. SJR: Q1, IF: 3.589.
    8. A. Bennett, I. Gadassi, Z. Priel, Y. Mandelbaum, A. Karsenty, T. Luc, A. Chelly, I. Shlimak, Z. Zalevsky, “Fast Optoelectronic Responsivity of metal-oxide-semiconductor nanostructures”, Journal of Nanophotonics 10(3), 036001 (2016). doi: http://dx.doi.org/10.1117/1.JNP.10.036001. SJR: Q2, IF: 1.562.
    9. Y. Mandelbaum, A. Zev, A. Chelly, Z. Zalevsky, A. Karsenty, “Study of the Photo- and Thermo-Activation Mechanisms in Nanoscale SOI Modulator”, Journal of Sensors, Volume 2017 (2017), Article ID 9581976, 11 pages. doi: https://doi.org/10.1155/2017/9581976. SJR: Q2, IF: 2.057.
    10. A. Karsenty, E. Novoselski, A. Yifrach, E. Lanzmann and Y. Arieli, “Manipulations of Wavefront Propagation: Useful Methods and Applications for Interferometric Measurements and Scanning”, Scanning, Volume 2017, Article ID 7293905, 7 pages. doi: https://doi.org/10.1155/2017/7293905. IF: 0.994, SJR: Q3.
    11. M. Bendayan, R. Sabo, R. Zolberg, Y. Mandelbaum, A. Chelly, A. Karsenty, "Electrical control simulation of near infrared emission in SOI-MOSFET quantum well devices," Journal of Nanophotonics 11(3), 036016 (2017). doi: http://dx.doi.org/10.1117/1.JNP.11.036016. SJR: Q2, IF: 1.562.
    12. Y. Mandelbaum, I. Gadasi, A. Zev, A. Chelly, Z. Zalevsky, and A. Karsenty, “Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor”, J. of Sensors, Volume 2017 (2017), Article ID 1961734, 9 pages. doi: https://doi.org/10.1155/2017/1961734. IF: 2.057, SJR: Q2.
    13. M. Karelits, Y. Mandelbaum, A. Chelly, and A. Karsenty, “Electro-Optical Study of Nanoscale Al-Si-Truncated Conical Photodetector with Subwavelength Aperture”, Journal of Nanophotonics 11(4), 046021 (2017). doi: http://dx.doi.org/10.1117/1.JNP.11.046021. IF: 1.562, SJR: Q2.
    14. A. Karsenty, Z. Weig, S. Feldman, Y. Arieli, “Full Field Imaging Ellipsometry (FFIE) Platform using CCD Camera and Advanced Software for Simultaneous Spots’ Sensing and Measurement”, International Journal of Measurement Technologies and Instrumentation Engineering (IJMTIE)  6(1), 33-45, 2017. doi: https://doi.org/10.4018/IJMTIE.2017010104.
    15. A. Karsenty, Y. Lichtenstadt, S. Naeim, Y. Arieli, “Improving Interferometry Instrumentation by Mixing Stereoscopy for 2π Ambiguity Solving”, International Journal of Measurement Technologies and Instrumentation Engineering (IJMTIE) 6(2), 43-55, 2017. doi: https://doi.org/10.4018/IJMTIE.2017070104.
    16. A. Karsenty and Y. Mandelbaum, “Computer Algebra Challenges in Nanotechnology: Accurate Modeling of nanoscale electro-optic devices using Finite Elements Method”, Mathematics in Computer Science 13(1-2), 117–130 (2019). doi: https://doi.org/10.1007/s11786-018-0375-z. IF: 0.62, SJR: Q3.
    17. M. Karelits, Y. Mandelbaum, A. Chelly, A. Karsenty, “Laser beam scanning using near-field scanning optical microscopy nanoscale silicon-based photodetector”, Journal of Nanophotonics 12(3) 036002 (23 July 2018). doi: https://doi.org/10.1117/1.JNP.12.036002. IF: 1.562, SJR: Q2.
    18. M. Bendayan, Y. Mandelbaum, G. Teller, A. Chelly, and A. Karsenty, “Probing of Quantum Energy Levels in Nanoscale Body SOI-MOSFET: Experimental and Simulation Results”, J. of Appl. Phys. 124, 124306 (2018). doi: https://aip.scitation.org/doi/10.1063/1.5041857. IF: 2.328, SJR: Q2.
    19. E. Terkieltaub-Lee, Y. Albeck, and A. Karsenty, “Mode Analysis and Optimization of Split Y-Junction Sharing Very Low Index Difference”, Journal of Nanophotonics, 13(2), 026016 (22 June 2019). doi: https://doi.org/10.1117/1.JNP.13.026016. IF: 1.562, SJR: Q2.
    20. M. Karelits, Y. Mandelbaum, Z. Zalevsky, and A. Karsenty, “Time-Spectral based Polarization-Encoding for Spatial-Temporal Super-Resolved NSOM Readout”, Nature Scientific Reports 9, 13089 (2019). doi: https://doi.org/10.1038/s41598-019-49721-w. SJR: Q1, IF: 5.133.
    21. M. Bendayan, A. Chelly and A. Karsenty, “Quantum Physics Applied to Modern Optical MOS Transistor”, Opt. Eng. 58(9), 097106 (2019). doi: https://doi.org/10.1117/1.OE.58.9.097106. SJR: Q1, IF: 1.209.
    22. A. Karsenty, R. Mottes, “Hall Amplifier Nanoscale Device (HAND): Modeling, Simulations and Feasibility Analysis for THz Sensor”, Nanomaterials 2019, 9(11), 1618, Special Issue “Nano Fabrications of Solid-State Sensors and Sensor Systems”. doi: https://doi.org/10.3390/nano9111618. SJR: Q1, IF: 5.719.
    23. J. Belhassen, Z. Zalevsky, and A. Karsenty, “Optical Polarization Sensitive Ultra-Fast Switching and Photo-Electrical Device”, Nanomaterials 2019, 9(12), 1743, Special Issue “Nano Fabrications of Solid-State Sensors and Sensor Systems”. doi: https://doi.org/10.3390/nano9121743. SJR: Q1, IF: 5.719.
    24. M. Karelits, E. Lozitsky, A. Chelly, Z. Zalevsky and A. Karsenty, “Advanced Surface Probing using Dual-Mode NSOM-AFM Silicon-Based Photo-Sensor”, Nanomaterials 2019, 9(12), 1792, Special Issue “Nano Fabrications of Solid-State Sensors and Sensor Systems”. doi: https://doi.org/10.3390/nano9121792. SJR: Q1, IF: 5.719.
    25. J. Belhassen, A. Frisch, Y. Kapellner, Z. Zalevsky, and A. Karsenty, “V-groove-shaped silicon-on-insulator photopolarized activated modulator (SOIP2AM): A polarizing transistor”, J. of Optical Society of America (JOSA) A 37(1), 46-55 (2020). doi: https://doi.org/10.1364/JOSAA.37.000046. SJR: Q1, IF: 1.861.
    26. T. Eisenfeld and A. Karsenty, “Super High Intensity Nano-Emitting (SHINE) Pixel for High Resolution and High Brightness Displays”, Journal of Nanophotonics 14(1), 016002 (7 January 2020). doi: https://doi.org/10.1117/1.JNP.14.016002. SJR: Q2, IF: 1.562.
    27. T. Eisenfeld and A. Karsenty, “Design and Modeling of Light Emitting Nano-pixel Structure (LENS) for High Resolution Display (HRD) in Visible Range”, Nanomaterials 10(2), 214, 2020. doi: https://doi.org/10.3390/nano10020214. SJR: Q1, IF: 5.719.
    28. E. Terkieltaub-Lee, Y. Albeck, and A. Karsenty, “Power Transfer between coupled waveguides made of different material for smooth integrated optical communication”, Journal of Nanophotonics 14(2), 026002 (7 April 2020). doi: https://doi.org/10.1117/1.JNP.14.026002. SJR: Q2, IF: 1.562.
    29. A. Karsenty, “A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nano-Scales and Quantum Devices”, Sensors 20(15), 4163, 2020.  doi: https://doi.org/10.3390/s20154163. SJR: Q1, IF: 3.847.
    30. M. Karelits, Z. Zalevsky, A. Karsenty, “Nano Polarimetry: Enhanced AFM-NSOM Triple-Mode Polarimeter Tip”, Nature Scientific Reports 10, 16201 (2020). doi: https://doi.org/10.1038/s41598-020-72483-9. SJR: Q1, IF: 5.133.
    31. Y. Mandelbaum, R. Mottes, Z. Zalevsky, D. Zitoun, A. Karsenty, “Design of Surface Enhanced Raman Scattering (SERS) Nanosensor Array”, Sensors 20(18), 5123, 2020. doi: https://doi.org/10.3390/s20185123. SJR: Q1, IF: 3.847.
    32. H. Perlman, T. Eisenfeld, A. Karsenty, “Performance Enhancement and Applications Review of Nano Light Emitting Device (LED)”, Nanomaterials 2021, 11(1), 23. Section “Nanophotonics Materials and Devices”, Special Issue “Nanophotonics for Light-Matter Interaction”. doi: https://doi.org/10.3390/nano11010023. SJR: Q1, IF: 5.719.
    33. Y. Mandelbaum, R. Mottes, Z. Zalevsky, D. Zitoun, A. Karsenty, “Investigations of Shape, Material and Excitation Wavelength Effects on Field Enhancement in SERS Advanced Tips”, Nanomaterials 2021, 11(1), 237. Special Issue “Application of SERS for Nanomaterials”. doi: https://doi.org/10.3390/nano11010237. SJR: Q1, IF: 5.719.
    34. G. Hirshfeld, Y. Garcia, G. Perepelitsa, Y. Vidal, A. Karsenty, Y. Kabessa and A. J. Agranat, “Enhanced electro-optic effect in potassium lithium tantalate niobate at the paraelectric phase near Tc”, Results in Physics, Volume 23, 2021, 104059. doi: https://doi.org/10.1016/j.rinp.2021.104059. SJR: Q1, IF: 4.565.
    35. A. Chelly, J. Belhassen, A. Karsenty, “Seebeck Coefficient’s Comparative Evaluation by Cross-Examination of Time-dependent Analytical Model, Numerical Simulation and Experimental Measurement Applied to Germanium Surface”, Applied Surface Science, Volume 568, 2021, 150876. doi: https://doi.org/10.1016/j.apsusc.2021.150876. SJR: Q1, IF: 7.392.
    36. A. Khakshoor, J. Belhassen, M. Bendayan, A. Karsenty, “Doping Modulation of Self-Induced Electric Field (SIEF) in Asymmetric GaAs/GaAlAs/GaAs Quantum Wells”, Results in Physics, Volume 32, 2022, 105093. doi: https://doi.org/10.1016/j.rinp.2021.105093. SJR: Q1, IF: 4.565.
    37. D. Glukhov, Z. Zalevsky, A. Karsenty, “Picosecond Pulsed Laser Illumination: An Ultimate Solution for Photonic vs. Thermal Processes’ Contest in SOI Photo-Activated Modulator”, Nature Scientific Reports 12, 1547 (2022). doi: https://doi.org/10.1038/s41598-021-04710-w. SJR: Q1, IF: 5.133.
    38. A. Chelly, J. Belhassen, A. Karsenty, “Spatial-Dependence Cross-Examination Method of the Seebeck Effect Applied to Ge Surface”, Applied Surface Science, Volume 585, 2022, 152587. doi: https://doi.org/10.1016/j.apsusc.2022.152587. SJR: Q1, IF: 7.392.
    39. D. Glukhov, A. Z. Levi, Z. Zalevsky, A. Karsenty, “Energy Hot Spots Distribution on Groove Surface, Elucidated by Hybrid Optical Model in Illuminated SOI Photo-Polarized-Activated Modulator”, Applied Surface Science, Volume 588, 2022, 152845. doi: https://doi.org/10.1016/j.apsusc.2022.152845. SJR: Q1, IF: 7.392.
    40. M. Bendayan, J. Belhassen, A. Karsenty, “Modulated Photoluminescence Low Temperature Measurements with Controlled Self-Induced Electric Field (SIEF) in Asymmetric GaAs/GaAlAs/GaAs Quantum Wells”, Journal of Luminescence 250 (2022), 119109. doi: https://doi.org/10.1016/j.jlumin.2022.119109. SJR: Q2, IF: 3.599.
    41. J. Belhassen, D. Glukhov, M. Karelits, Z. Zalevsky and A. Karsenty, “Nano-Apertures vs. Nano-Barriers: Surface Scanning through Obstacles and Super-Resolution in AFM-NSOM Dual-Mode”, Nano-Structures & Nano-Objects 33 (2023), 100933. doi: https://doi.org/10.1016/j.nanoso.2022.100933. SJR: Q1, IF: 0.807.
    1. J. Belhassen, S. Glass, E. Teblum, G. A. Stanciu, D. E. Tranca, Z. Zalevsky, S. G. Stanciu, A. Karsenty, “Towards Augmenting Tip-Enhanced Nanoscopy with Optically Resolved Scanning Probe Tips”, Advanced Photonics Nexus 2(2), 026002-1 – 026002-17 (January 2023). doi: https://doi.org/10.1117/1.APN.2.2.026002. SJR: Q1, expected IF: 13.5 (as its sister journal Advanced Photonics).
    2. A. Chelly, S. Glass, J. Belhassen, A. Karsenty, “Broad review of four-point probe correction factors: Enhanced analytical model using advanced numerical and experimental cross-examination”, Results in Physics, Volume 48, 2023, 106445. doi: https://doi.org/10.1016/j.rinp.2023.106445. SJR: Q1, IF: 4.565.
    3. Avi Karsenty, “Overcoming Silicon Limitations in Nanophotonic Devices by Geometrical Innovation: Review (Invited Article)”, IEEE Photonics Journal 15(4), 1-19 (2023). doi: 10.1109/JPHOT.2023.3295077 . SJR: Q1, IF: 2.4.
    1. A. Sanjeev, D. Glukhov, R. S. Rafeeka, A. Karsenty, Z. Zalevsky, “Near-field Projection Optical Microscope (NPOM): A New Approach to Nanoscale Super-Resolved Imaging”, Nature Scientific Reports 13(1), 1-13 (2023). SJR: Q1, IF: 5.133. doi: https://doi.org/10.1038/s41598-023-41978-6.

     

    Last Updated Date : 01/04/2024