06/06/2018 - 12:00 - 11:10
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2018-06-06 11:10:00
2018-06-06 12:00:00
Seminar: Selective Molecular Sensing using Nanowire Transistors
For the past several decades, there is a growing demand for the development of low-power gas sensing technology for the selective detection of volatile organic compounds (VOCs), important for monitoring safety, pollution and healthcare. We present the selective detection of various VOCs using the electrostatically formed nanowire (EFN) transistor without any surface modification of the device. Selectivity towards specific VOC is achieved by training machine-learning based classifiers using the calculated changes in the threshold voltage and the drain-source on current, obtained from systematically controlled biasing of the surrounding gates (junction and back gates) of the field-effect transistors (FET). Specific biasing of the device has recently shown superb sensitivity to Ammonia and other molecules under very high humidity conditions. This makes the EFN platform a selective sensor, working under ambient conditions and room temperature, which is suitable for mass production and low-power sensing technology.
Invitation
TeacherProf. Yossi Rosenwaks, Faculty of Engineering, Tel-Aviv University, Tel-Aviv
Building 211, room 112
Department of Chemistry
chemistry.office@biu.ac.il
Asia/Jerusalem
public
Location
Building 211, room 112
For the past several decades, there is a growing demand for the development of low-power gas sensing technology for the selective detection of volatile organic compounds (VOCs), important for monitoring safety, pollution and healthcare. We present the selective detection of various VOCs using the electrostatically formed nanowire (EFN) transistor without any surface modification of the device. Selectivity towards specific VOC is achieved by training machine-learning based classifiers using the calculated changes in the threshold voltage and the drain-source on current, obtained from systematically controlled biasing of the surrounding gates (junction and back gates) of the field-effect transistors (FET). Specific biasing of the device has recently shown superb sensitivity to Ammonia and other molecules under very high humidity conditions. This makes the EFN platform a selective sensor, working under ambient conditions and room temperature, which is suitable for mass production and low-power sensing technology.
Invitation
Teacher
Prof. Yossi Rosenwaks, Faculty of Engineering, Tel-Aviv University, Tel-Aviv
